Droopad, R. : rechercher sur Z-Library

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1

Advances in heteroepitaxy of oxides on silicon

Z. Yu, Y. Liang, C. Overgaard, X. Hu, J. Curless, H. Li, Y. Wei, B. Craigo, D. Jordan, R. Droopad, J. Finder, K. Eisenbeiser, D. Marshall, K. Moore, J. Kulik, P. Fejes

Journal:

Thin Solid Films

Année:

2004

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2004

2

Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O3 Capacitors with SrRuO3 Electrodes on Si Wafers

Maki, K., Liu, B. T., So, Y., Vu, H., Ramesh, R., Finder, J., Yu, Z., Droopad, R., Eisenbeiser, K.

Journal:

Integrated Ferroelectrics

Année:

2003

Langue:

english

Fichier:

PDF, 239 KB

english, 2003

3

A novel optical bistable multiple-quantum-well phase modulator

Park, C., Shiralagi, K.T., Droopad, R., Maracas, G.N.

Journal:

IEEE Photonics Technology Letters

Année:

1992

Langue:

english

Fichier:

PDF, 306 KB

english, 1992

4

A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio

Gerber, D.S., Droopad, R., Maracas, G.N.

Journal:

IEEE Photonics Technology Letters

Année:

1993

Langue:

english

Fichier:

PDF, 445 KB

english, 1993

5

A vertical-cavity surface-emitting laser appliqued to a 0.8-μm NMOS driver

Mathine, D.L., Droopad, R., Maracas, G.N.

Journal:

IEEE Photonics Technology Letters

Année:

1997

Langue:

english

Fichier:

PDF, 47 KB

english, 1997

6

Epitaxial BaTiO 3 films on silicon for MFSFET applications

Hallmark, Jerry, Yu, Zhiyi, Droopad, Ravi, Ramdani, Jamal, Curless, Jay, Overgaard, Corey, Finder, Jeff, Marshall, Dan, Wang, Jun, Ooms, Bill

Journal:

Integrated Ferroelectrics

Année:

1999

Langue:

english

Fichier:

PDF, 548 KB

english, 1999

7

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1995)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry

Fathollahnejad, H., Daryanani, S., Mathine, D.L., Chuang, C.P., Droopad, R., Maracas, G.N.

Année:

1995

Langue:

english

Fichier:

PDF, 649 KB

english, 1995

8

Second-order Raman spectroscopy of AlAs: A test of lattice-dynamical models

Spencer, G. S., Grant, J., Gray, R., Zolman, J., Menéndez, J., Droopad, R., Maracas, G. N.

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 179 KB

english, 1994

9

Lattice-constant dependence of the dynamical effective charge in AlAs and GaAs

Spencer, G. S., Ho, A. C., Menéndez, J., Droopad, R., Fathollahnejad, H., Maracas, G. N.

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 285 KB

english, 1994

10

A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes

Zhang, W-D., Brown, E. R., Growden, T. A., Berger, P. R., Droopad, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 950 KB

english, 2016

11

Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures

R. Droopad, R.A. Puechner, K.Y. Choi, K.T. Shiralagi, G.N. Maracas

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 871 KB

english, 1991

12

Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy

K.T. Shiralagi, R.A. Puechner, K.Y. Choi, R. Droopad, G.N. Maracas

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 854 KB

english, 1991

13

Electrical and optical characterization of gas source and solid source MBE low temperature buffers

R.A. Puechner, D.A. Johnson, K.T. Shiralagi, D.S. Gerber, R. Droopad, G.N. Maracas

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 618 KB

english, 1991

14

In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry

J.L. Edwards, G.N. Maracas, K.T. Shiralagi, K.Y. Choi, R. Droopad

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 474 KB

english, 1992

15

Low temperature GaAs grown by gas source molecular beam epitaxy

R. Droopad, K.T. Shiralagi, R.A. Puechner, K.Y. Choi, G.N. Maracas

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 493 KB

english, 1992

16

Pseudomorphic InGaAs/GaAs and GaAs/A1GaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications

Ravi Droopad, Don S. Gerber, Calvin Choi, George N. Maracas

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 447 KB

english, 1993

17

Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity

S. Moneger, H. Qiang, F.H. Pollak, D.L. Mathine, R. Droopad, G.N. Maracas

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 356 KB

english, 1996

18

In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

G.N. Maracas, J.L. Edwards, D.S. Gerber, R. Droopad

Journal:

Applied Surface Science

Année:

1993

Langue:

english

Fichier:

PDF, 454 KB

english, 1993

19

Gate dielectrics on compound semiconductors

R. Droopad, M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, A. Kummel

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 587 KB

english, 2005

20

Development of GaAs-based MOSFET using molecular beam epitaxy

Ravi Droopad, Karthik Rajagopalan, Jon Abrokwah, Liz Adams, Nate England, Dave Uebelhoer, Peter Fejes, Peter Zurcher, Matthias Passlack

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 541 KB

english, 2007

21

Monte Carlo simulations of InGaAs nano-MOSFETs

K. Kalna, R. Droopad, M. Passlack, A. Asenov

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 429 KB

english, 2007

22

Compound semiconductor MOSFETs

R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, M. Passlack

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2007

23

Monte Carlo simulations of InGaAs nano-MOSFETs

K. Kalna, R. Droopad, M. Passlack, A. Asenov

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 345 KB

english, 2007

24

Characteristics of thin lanthanum lutetium oxide high-k dielectrics

Dina H. Triyoso, David C. Gilmer, Jack Jiang, Ravi Droopad

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 671 KB

english, 2008

25

Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(0 0 1)

Jian Shen, Darby L. Feldwinn, Wilhelm Melitz, Ravi Droopad, Andrew C. Kummel

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2011

26

Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices

G.W. Paterson, J.A. Wilson, D. Moran, R. Hill, A.R. Long, I. Thayne, M. Passlack, R. Droopad

Journal:

Materials Science and Engineering: B

Année:

2006

Langue:

english

Fichier:

PDF, 630 KB

english, 2006

27

In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs

Ravi Droopad, Karthik Rajagopalan, Jonathan Abrokwah, Michael Canonico, Matthias Passlack

Journal:

Solid-State Electronics

Année:

2006

Langue:

english

Fichier:

PDF, 103 KB

english, 2006

28

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen

Jonathon B. Clemens, Sarah R. Bishop, Darby L. Feldwinn, Ravi Droopad, Andrew C. Kummel

Journal:

Surface Science

Année:

2009

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2009

29

Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction

Darby L. Feldwinn, Jonathon B. Clemens, Jian Shen, Sarah R. Bishop, Tyler J. Grassman, Andrew C. Kummel, Ravi Droopad, Matthias Passlack

Journal:

Surface Science

Année:

2009

Langue:

english

Fichier:

PDF, 3.54 MB

english, 2009

30

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

Jian Shen, Jonathon B. Clemens, Evgueni A. Chagarov, Darby L. Feldwinn, Wilhelm Melitz, Tao Song, Sarah R. Bishop, Andrew C. Kummel, Ravi Droopad

Journal:

Surface Science

Année:

2010

Langue:

english

Fichier:

PDF, 1.84 MB

english, 2010

31

Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/c(8 × 2)

Jonathon B. Clemens, Ravi Droopad, Andrew C. Kummel

Journal:

Surface Science

Année:

2010

Langue:

english

Fichier:

PDF, 2.45 MB

english, 2010

32

Epitaxial oxides on silicon grown by molecular beam epitaxy

Ravi Droopad, Zhiyi Yu, Jamal Ramdani, Lyndee Hilt, Jay Curless, Corey Overgaard, John L Edwards, Jeff Finder, Kurt Eisenbeiser, Jun Wang, V Kaushik, B-Y Ngyuen, Bill Ooms

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 352 KB

english, 2001

33

Development of integrated heterostructures on silicon by MBE

Ravi Droopad, Zhiyi Yu, Hao Li, Yong Liang, Corey Overgaard, Alex Demkov, Xiaodong Zhang, Karen Moore, Kurt Eisenbeiser, Mike Hu, Jay Curless, Jeff Finder

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 590 KB

english, 2003

34

Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy

J Ramdani, R Droopad, Z Yu, J.A Curless, C.D Overgaard, J Finder, K Eisenbeiser, J.A Hallmark, W.J Ooms, V Kaushik, P Alluri, S Pietambaram

Journal:

Applied Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 2.30 MB

english, 2000

35

Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

R Droopad, Z Yu, J Ramdani, L Hilt, J Curless, C Overgaard, J.L Edwards Jr, J Finder, K Eisenbeiser, W Ooms

Journal:

Materials Science and Engineering: B

Année:

2001

Langue:

english

Fichier:

PDF, 367 KB

english, 2001

36

Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack

Journal:

physica status solidi (c)

Année:

2007

Langue:

english

Fichier:

PDF, 673 KB

english, 2007

37

Epitaxial Pb(Zr,Ti)O3Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition

S. Y. Yang, B. T. Liu, J. Ouyang, V. Nagarajan, V. N. Kulkarni, R. Ramesh, J. Kidder, R. Droopad, K. Eisenbeiser

Journal:

Journal of Electroceramics

Année:

2005

Langue:

english

Fichier:

PDF, 223 KB

english, 2005

38

Crystalline oxide-based devices on silicon substrates

K. Eisenbeiser, R. Droopad, Z. Yu, C. Overgaard, J. Kulik, J. Finder, S. M. Smith, S. Voight, D. Penunuri

Journal:

Journal of Electronic Materials

Année:

2003

Langue:

english

Fichier:

PDF, 157 KB

english, 2003

39

In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy

W. Priyantha, G. Radhakrishnan, R. Droopad, M. Passlack

Journal:

Journal of Crystal Growth

Année:

2011

Langue:

english

Fichier:

PDF, 414 KB

english, 2011

40

Comparative study of Sr and Ba adsorption on Si(1 0 0)

Xiaoming Hu, Z. Yu, J.A. Curless, R. Droopad, K. Eisenbeiser, J.L. Edwards Jr., W.J. Ooms, D. Sarid

Journal:

Applied Surface Science

Année:

2001

Langue:

english

Fichier:

PDF, 278 KB

english, 2001

41

Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film

H. Fathollahnejad, R. Rajesh, J. Liu, R. Droopad, G. N. Maracas, R. W. Carpenter

Journal:

Journal of Electronic Materials

Année:

1995

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1995

42

Enhancement of mobility in pseudomorphic FETs with up and down monolayers

Goronkin, H., Tehrani, S., Droopad, R., Maracas, G.N., Shen, J., Legge, R.N., Zhu, X.T.

Journal:

IEEE Transactions on Electron Devices

Année:

1991

Langue:

english

Fichier:

PDF, 150 KB

english, 1991

43

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

Oxland, R., Chang, S.W., Xu Li, Wang, S.W., Radhakrishnan, G., Priyantha, W., van Dal, M.J.H., Hsieh, C.H., Vellianitis, G., Doornbos, G., Bhuwalka, K., Duriez, B., Thayne, I., Droopad, R., Passlack,

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 337 KB

english, 2012

44

Implant-free high-mobility flatband MOSFET: principles of operation

Passlack, M., Rajagopalan, K., Abrokwah, J., Droopad, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 266 KB

english, 2006

45

Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

Passlack, M., Droopad, R., Brammertz, G.

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 827 KB

english, 2010

46

Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layers

Wang, Y., Ganpule, C., Liu, B. T., Li, H., Mori, K., Hill, B., Wuttig, M., Ramesh, R., Finder, J., Yu, Z., Droopad, R., Eisenbeiser, K.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 295 KB

english, 2002

47

Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates

Eisenbeiser, K., Droopad, R., Jenn-Hwa Huang

Journal:

IEEE Electron Device Letters

Année:

1999

Langue:

english

Fichier:

PDF, 49 KB

english, 1999

48

Structure of V thin films on Al(100) using XPD, LEED, and LEIS

W. Priyantha, R. Droopad, M. Kopczyk, R.J. Smith, A. Kayani

Journal:

Surface Science

Année:

2012

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2012

49

Barium adsorption on Si(100)-(2×1) at room temperature: a bi-polar scanning tunneling microscopy study

X. Hu, X. Yao, C.A. Peterson, D. Sarid, Z. Yu, J. Wang, D.S. Marshall, J.A. Curless, J. Ramdani, R. Droopad, J.A. Hallmark, W.J. Ooms

Journal:

Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 521 KB

english, 2000

50

Phases of Ba adsorption on Si(100)-(2×1) studied by LEED and AES

Xiaoming Hu, C.A. Peterson, D. Sarid, Z. Yu, J. Wang, D.S. Marshall, R. Droopad, J.A. Hallmark, W.J. Ooms

Journal:

Surface Science

Année:

1999

Langue:

english

Fichier:

PDF, 595 KB

english, 1999